The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Dec. 27, 2006
Applicants:
Min-hee Cho, Gyeonggi-do, KR;
Ji-young Kim, Gyeonggi-do, KR;
Inventors:
Min-Hee Cho, Gyeonggi-do, KR;
Ji-Young Kim, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a dual gate dielectric layer that increases a performance of a semiconductor device. The semiconductor device includes a first dielectric layer having a predetermined thickness on a semiconductor substrate. The first dielectric layer is formed on a first region. The semiconductor device also includes a second dielectric layer having a dielectric constant higher than that of the first dielectric layer. The second dielectric layer is formed on both the first region and a second region.