Structure and method for resurf ldmosfet with a current diverter

Abstract

Methods and apparatus are provided for reducing substrate leakage current of RESURF LDMOSFET devices. A semiconductor device comprises a semiconductor substrate () of a first type; first and second terminals () laterally spaced-apart on a surface () above the substrate; a first semiconductor region () of the first type overlying the substrate and ohmically coupled to the first terminal (); a second semiconductor region () of a second opposite type in proximity to the first region and ohmically coupled to the first terminal; a third semiconductor region () of the second type overlying the substrate and ohmically coupled to the second terminal () and laterally arranged with respect to the first region; a parasitic vertical device comprising the first region and the substrate, the parasitic vertical device for permitting leakage current to flow from the first terminal to the substrate; a fourth semiconductor region () of the first type in proximity to the third region and ohmically coupled to the second terminal, thereby forming in combination with the third region a shorted base-collector region of a lateral transistor extending between the first and second terminals to provide diode action; a channel region () of the first type separating the first and third regions at the surface; a gate insulator () overlying the channel region; and a gate electrode () overlying the gate insulator.