The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Feb. 09, 2007
Seong-goo Kim, Seoul, KR;
Kang-yoon Lee, Seongnam-si, KR;
Yun-gi Kim, Yongin-si, KR;
Bong-soo Kim, Sengnam-si, KR;
Seong-Goo Kim, Seoul, KR;
Kang-Yoon Lee, Seongnam-si, KR;
Yun-Gi Kim, Yongin-si, KR;
Bong-Soo Kim, Sengnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are transistors, semiconductor integrated circuit interconnections and methods of forming the same. The transistors, semiconductor integrated circuit interconnections and methods of forming the same may improve electrical characteristics between gate electrodes or interconnection electrodes and simplify a semiconductor fabrication process related to gate electrodes or interconnection electrodes. A material layer having first and second regions may be prepared. A trench may be formed in a selected portion of the first region. Transistors or semiconductor integrated circuit interconnections may be in the first and second regions, respectively. One of the transistors or the semiconductor integrated circuit interconnections may be formed in the trench. The transistors or the semiconductor integrated circuit interconnections may be electrically insulated from each other.