The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Sep. 01, 2005
Daniel M. Kinzer, El Segundo, CA (US);
David Paul Jones, South Glamorgan, GB;
Kyle Spring, Temecula, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
David Paul Jones, South Glamorgan, GB;
Kyle Spring, Temecula, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A trench type top drain MOSgated device has a drain electrode on the die top and a source electrode on the die bottom surface. The device is turned on by a control voltage connected between a drain and a gate region. The device cell has a body short trench and a gate trench. Gate poly is disposed in the bottom of the gate trench and is disposed adjacent a thin gate oxide lining a channel region with minimum overlap of the drain drift region. The bottom of the body short trench contains a contact which shorts the body region to the channel region. The body short, top drain region and gate polysilicon are simultaneously silicided. The gate trench is widened at its top to improve Qcharacteristics. Both the body short trench and gate trench are simultaneously filled with gap fill material.