The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Jul. 31, 2006
Takahiko Hashidzume, Toyama, JP;
Nobuyoshi Takahashi, Toyama, JP;
Koji Yoshida, Toyama, JP;
Keita Takahashi, Nara, JP;
Kiyoshi Kurihara, Osaka, JP;
Yoshiya Moriyama, Osaka, JP;
Takahiko Hashidzume, Toyama, JP;
Nobuyoshi Takahashi, Toyama, JP;
Koji Yoshida, Toyama, JP;
Keita Takahashi, Nara, JP;
Kiyoshi Kurihara, Osaka, JP;
Yoshiya Moriyama, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor memory is provided with memory cells including bit lines made of a diffusion layer formed in a semiconductor substrate, charge-trapping gate insulating films formed between the bit lines and word lines formed on the gate insulating films. An interlayer insulating film is formed over the memory cells and bit line contact plugs are formed in the interlayer insulating film to be connected to the bit lines. Further, a light blocking film is formed on at least part of the interlayer insulating film covering the memory cells and part of the light blocking film formed on the interlayer insulating film extends from the surface to the inside of the interlayer insulating film in the neighborhood of the bit line contact plugs.