The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2008

Filed:

Dec. 04, 2006
Applicants:

Shunsuke Shioya, Abiko, JP;

Sotomitsu Ikeda, Yokohama, JP;

Inventors:

Shunsuke Shioya, Abiko, JP;

Sotomitsu Ikeda, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device, comprising a semiconductor nanowire having a first region with one of a PN junction and a PIN junction and a second region with a field effect transistor structure, a pair of electrodes connected to both ends of the semiconductor nanowire, and a gate electrode provided in at least a part of the second region via an insulating layer. The semiconductor nanowire has a P-type semiconductor portion and an N-type semiconductor portion, and one of the P-type semiconductor portion and the N-type semiconductor portion is a common structural element of both the first and second regions.


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