The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2008

Filed:

Apr. 25, 2005
Applicants:

Chin-mao Lin, Chiayi, TW;

Kei-hsiung Yang, Tao-Yuan Hsien, TW;

Chian-chih Hsiao, Taipei Hsien, TW;

Inventors:

Chin-Mao Lin, Chiayi, TW;

Kei-Hsiung Yang, Tao-Yuan Hsien, TW;

Chian-Chih Hsiao, Taipei Hsien, TW;

Assignee:

HannStar Display Corp., Yang-Mei, Tao-Yuan Hsien, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a manufacturing method of an image TFT array, which includes providing a substrate including a thin film transistor region, a storage capacitor region, a pad region, and a common electrode region, forming a photoresist layer on the substrate, and performing a photolithographic and etching process by utilizing a half-tone mask to pattern the photoresist layer to define a position of a through hole on the storage capacitor region and form the photoresist layer of a first thickness on the thin film transistor region and the photoresist layer of a second thickness on the region between the thin film transistor region and the storage capacitor region, wherein the first thickness is greater than the second thickness.


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