The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Nov. 07, 2005
Jang-yeon Kwon, Seongnam-si, KR;
Hyuk Lim, Seoul, KR;
Takashi Noguchi, Seongnam-si, KR;
Young-soo Park, Suwon-si, KR;
Suk-pil Kim, Yongin-si, KR;
Hans S. Cho, Seoul, KR;
Ji-sim Jung, Incheon-si, KR;
Kyung-bae Park, Seoul, KR;
Do-young Kim, Suwon-si, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Hyuk Lim, Seoul, KR;
Takashi Noguchi, Seongnam-si, KR;
Young-soo Park, Suwon-si, KR;
Suk-pil Kim, Yongin-si, KR;
Hans S. Cho, Seoul, KR;
Ji-sim Jung, Incheon-si, KR;
Kyung-bae Park, Seoul, KR;
Do-young Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.