The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Aug. 26, 2005
Applicants:
Kunihiro Miyazaki, Yokohama, JP;
Hiroyuki Matsuo, Suwa, JP;
Toshiki Nakajima, Suwa, JP;
Inventors:
Assignees:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Seiko Epson Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.