The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Aug. 03, 2006
Chan Bae Kim, Seoul, KR;
Chai O Chung, Kyoungki-do, KR;
Chan Bae Kim, Seoul, KR;
Chai O Chung, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
In manufacturing a semiconductor device, a metal film is formed on a semiconductor substrate, and a high-temperature amorphous carbon film pattern for defining a wiring forming area is formed on the metal film. The metal film is etched by using the high-temperature amorphous carbon film pattern as an etching barrier to form a metal wiring. A low-temperature amorphous carbon film as an IMD is formed on the resultant structure so as to cover the metal wiring including the high-temperature amorphous carbon film pattern. The low-temperature amorphous carbon film and the high-temperature amorphous carbon film pattern are etched to form a contact hole, which has greater width in an upper portion than in a lower portion thereof. Finally, a plug metal film is formed on the low-temperature amorphous carbon film to fill the contact hole.