The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Apr. 17, 2006
Kinya Ohtani, Kanagawa, JP;
Kinya Ohtani, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device and method of manufacturing the same. The method includes: forming a trench in a silicon substrate; forming a first insulating film on a surface of the silicon substrate, the surface including an interior wall of the trench; forming a polysilicon film which plugged in the trench and covered on an entire surface of the silicon substrate; forming a second insulating film with oxidizing a portion of the polysilicon film disposed outside of the trench, and oxidizing a surface region of the silicon substrate located beneath the first insulating film disposed outside of the trench and a surface region of the polysilicon film in the trench; and forming an embedded polysilicon layer by removing the second insulating film so that the surface of the silicon substrate is partially exposed and the polysilicon film partially remains in the trench.