The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Jan. 02, 2006
Ming-hung Chou, Hsin-Chu, TW;
Fu-chia Shone, Taipei, TW;
Ming-Hung Chou, Hsin-Chu, TW;
Fu-Chia Shone, Taipei, TW;
Skymedi Corporation, Hsinchu, TW;
Abstract
A memory structure formed between two doping regions in a semiconductor substrate includes two conductive blocks functioning as floating gates formed at two sides of a first conductive line functioning as a select gat and insulated from the first conductive line with two first dielectric spacers therebetween, wherein the two conductive blocks each have a raised top and raised parts of sides relative to the top of the first conductive line. A first dielectric layer is formed on the tops and the parts of the sides of the two conductive blocks. A second conductive line functioning as a word line is formed on the first dielectric layer, wherein the second conductive line has a part deposited between the two conductive blocks and is substantially perpendicular to the first conductive line and two doping region functioning as bit lines.