The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Nov. 01, 2005
Fengyan Zhang, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Jong-jan Lee, Camas, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Jong-Jan Lee, Camas, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing an insulator layer overlying the nanowires; etching to expose tips of the nanowires; forming a patterned metal electrode, with edges, overlying the tips of the nanowires; and, etching to expose the nanowires underlying the electrode edges. The nanowires can be a material such as IrO, TiO, InO, ZnO, SnO, SbO, or InO, to mane just a few examples. The insulator layer can be a spin-on glass (SOG) or low-k dielectric. In one aspect, the resultant structure includes exposed nanowires grown from the doped substrate regions and an insulator core with embedded nanowires. In a different aspect, the method forms a growth promotion layer overlying the substrate. The resultant structure includes exposed nanowires grown from the selectively formed growth promotion layer.