The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Feb. 01, 2005
Kenichi Ono, Tokyo, JP;
Masayoshi Takemi, Tokyo, JP;
Kenichi Ono, Tokyo, JP;
Masayoshi Takemi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a p-type GaAs cap layer on the band discontinuity reduction layer. The p-type cladding layer, the p-type band discontinuity reduction layer, and the p-type cap layer are each doped with a p-type dopant which is lower in diffusivity than Zn. The p-type band discontinuity reduction layer has a concentration of a p-type dopant lower in diffusivity than Zn of 2.5×10cmor higher to attain desired device characteristics, for example, high power output and efficiency.