The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7436065 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 14, 2008

Filed:

Apr. 28, 2005
Applicants:

Seiji Ohno, Minato-ku, JP;

Taku Kinoshita, Minato-ku, JP;

Inventors:

Seiji Ohno, Minato-ku, JP;

Taku Kinoshita, Minato-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrode contact structure having a high reliability is provided. The structure comprises an Au electrode formed on a GaAs substrate, a contact hole open in an insulating film on the Au electrode, and an Al wiring being in contact with the Au electrode through the contact hole. The difference between the height of the portion having the maximum thickness of the Al wiring and the height of the portion having the minimum thickness of the Al wiring is substantially equal to or smaller than the thickness of the insulating film. It is preferable that the thickness of the Au electrode is in the range of 0.1-0.2 μm, the overlapped width between the peripheral portion of the Au electrode and the insulating film is 1 μm or less, or the area of the contact hole is at least 16 μmor more.


Find Patent Forward Citations

Ohno, Seiji. (2008). Electrode contact structure (U.S. Patent No. 7436065). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7436065

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