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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7436044 B1

PDFFull Text
Expired
Date of Patent:
Oct. 14, 2008

Filed:

Jan. 04, 2006

Electrical fuses comprising thin film transistors (tfts), and methods for programming same

Applicants:

Babar A. Khan, Hopewell Junction, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Kai Xiu, White Plains, NY (US);

Inventors:

Babar A. Khan, Hopewell Junction, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Kai Xiu, White Plains, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

H. Daniel Schnurmann

Primary Examiner:

Mark Prenty

Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to electrical fuses that each comprises at least one thin film transistor. In one embodiment, the electrical fuse of the present invention comprises a hydrogenated thin film transistor with an adjacent heating element. Programming of such an electrical fuse can be effectuated by heating the hydrogenated thin film transistor so as to cause at least partial dehydrogenation. Consequentially, the thin film transistor exhibits detectible physical property change(s), which defines a programmed state. In an alternative embodiment of the present invention, the electrical fuse comprises a thin film transistor that is either hydrogenated or not hydrogenated. Programming of such an alternative electrical fuse can be effectuated by applying a sufficient high back gate voltage to the thin film transistor to cause state changes in the channel-gate interface. In this manner, the thin film transistor also exhibits detectible property change(s) to define a programmed state.

Find Patent Forward Citations

Khan, Babar. (2008). Electrical fuses comprising thin film transistors (tfts), and methods for programming same (U.S. Patent No. 7436044). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7436044

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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