The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
May. 24, 2005
Chan Woo Park, Daejeon, KR;
Sung Yool Choi, Daejeon, KR;
Han Young Yu, Daejeon, KR;
Ung Hwan Pi, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Sung Yool Choi, Daejeon, KR;
Han Young Yu, Daejeon, KR;
Ung Hwan Pi, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.