The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Oct. 04, 2007
Bruce B. Doris, Brewster, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Suk Hoon Ku, Beacon, NY (US);
Bruce B. Doris, Brewster, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Suk Hoon Ku, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device structure includes at least two field effect transistors formed on same substrate, the first field effect transistor includes a spacer having a first width, the second field effect transistor includes a compressive spacer having a second width, the first width being different than said second width. Preferably, the first width is narrower than the second width. A tensile stress dielectric film forms a barrier etch stop layer over the transistors.