The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Sep. 29, 2006
Ronghua Zhu, Chandler, AZ (US);
Amitava Bose, Tempe, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Amitava Bose, Tempe, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor deviceis provided. A first layerhas a first dopant type; a second layeris provided over the first layer; and a third layeris provided over the second layer and has the first dopant type. A plurality of first and second semiconductor regionsare within the third layer. The first semiconductor regionhas the first dopant type, and the second semiconductor regionhas the second dopant type. The first and second semiconductor regionsare disposed laterally to one another in an alternating pattern to form a super junction, and the super junction terminates with a final second semiconductor region' of the second dopant type.