The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Sep. 15, 2005
Stéphane Monfray, Grenoble, FR;
Stéphan Borel, Saint-Martin d′ Heres, FR;
Thomas Skotnicki, Crolles, FR;
Stéphane Monfray, Grenoble, FR;
Stéphan Borel, Saint-Martin d′ Heres, FR;
Thomas Skotnicki, Crolles, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
The insulated-gate field-effect transistor includes a substrate surmounted by a layer of silicon-germanium alloy, the ratio of the germanium concentration to the silicon concentration of which increases towards the surface of the substrate. The transistor is formed on the active zone in the silicon-germanium alloy layer and lies between two isolating zones. The transistor includes a narrow heterostructure strained-semiconductor channel including a SiGe alloy layer in compression and a silicon layer in tension, extending between the gate and a dielectric block buried in the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile