The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Feb. 03, 2006
Reiner Jumpertz, Freising, DE;
Klaus Schimpf, Freising, DE;
Reiner Jumpertz, Freising, DE;
Klaus Schimpf, Freising, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A vertical thyristor for ESD protection comprises an anode (), a cathode (), a first gate electrode () and a second gate electrode (). The first () and second () gate electrodes are arranged between the anode () and the cathode (), wherein the first gate electrode () is an epitaxial silicon layer () formed upon the anode () and the second gate electrode () is an epitaxial silicon-germanium layer () formed upon the first gate electrode (). The method of fabricating such a vertical thyristor comprises the steps of depositing an epitaxial silicon layer () upon the anode () and depositing an epitaxial silicon-germanium layer () upon the epitaxial silicon layer (), wherein the epitaxial silicon layer () forms the first gate electrode () and the epitaxial silicon-germanium layer () forms the second gate electrode () of the vertical thyristor.