The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Jul. 21, 2006
Jae Hoon Lee, Suwon, KR;
Bang Won OH, Seongnam, KR;
Hee Seok Choi, Seoul, KR;
Jeong Tak OH, Suwon, KR;
Seok Beom Choi, Daejeon, KR;
Su Yeol Lee, Seongnam, KR;
Jae Hoon Lee, Suwon, KR;
Bang Won Oh, Seongnam, KR;
Hee Seok Choi, Seoul, KR;
Jeong Tak Oh, Suwon, KR;
Seok Beom Choi, Daejeon, KR;
Su Yeol Lee, Seongnam, KR;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Abstract
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.