The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Nov. 09, 2006
Applicant:
Dong-goo Choi, Kyoungki-do, KR;
Inventor:
Dong-Goo Choi, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes: forming a first inter-layer insulation layer over a substrate where a plurality of first contact holes are formed; forming a conductive layer over the first inter-layer insulation layer to fill the first contact holes; etching the conductive layer such that a surface of the first inter-layer insulation layer is higher than that of the conductive layer, whereby a plurality of contact plugs filling the first contact holes are formed; and forming an etch stop layer more thickly over the surfaces of the contact plugs than the surface of the first inter-layer insulation layer.