The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Jan. 24, 2005
Applicants:
Akio Machida, Kanagawa, JP;
Takahiro Kamei, Kanagawa, JP;
Yoshiyuki Kawana, Kanagawa, JP;
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
Abstract
A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.
Machida, Akio. (2008). Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions (U.S. Patent No. 7435668). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7435668
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile