The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Feb. 05, 2004
Jia-xing Lin, Pan Chiao, TW;
Chi-lin Chen, Hsinchu, TW;
Yu-cheng Chen, Hsintien, TW;
Yih-rong Luo, Chung Li, TW;
Jia-Xing Lin, Pan Chiao, TW;
Chi-Lin Chen, Hsinchu, TW;
Yu-Cheng Chen, Hsintien, TW;
Yih-Rong Luo, Chung Li, TW;
Industrial Technology Research Institute, Chutung, Hsinchu Hsien, TW;
Abstract
A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.