The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Oct. 06, 2004
Applicants:
Veli Matti Airaksinen, Espoo, FI;
Maria Elina Hokkanen, Itäsalmi, FI;
Inventors:
Veli Matti Airaksinen, Espoo, FI;
Maria Elina Hokkanen, Itäsalmi, FI;
Assignee:
Okmetic Oyj, Vantaa, FI;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A new clean CVD growing process of dopant doped silicon layers comprising epitaxial silicon or polycrystalline silicon, has been developed. The process is occurring advantageously at a high growing temperature of 600-1250° C., having a phase in which silicon comprised halide is used as a silicon source gas with a dopant.