The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Oct. 05, 2005
Wei-chin Lin, Hsinchu, TW;
Hui-ling Chang, Hsinchu, TW;
Ching-hsiang Tsai, Hsinchu, TW;
Chao-chiun Liang, Hsinchu, TW;
Gen-wen Hsieh, Hsinchu, TW;
Yuh-wen Lee, Hsinchu, TW;
Wei-Chin Lin, Hsinchu, TW;
Hui-Ling Chang, Hsinchu, TW;
Ching-Hsiang Tsai, Hsinchu, TW;
Chao-Chiun Liang, Hsinchu, TW;
Gen-Wen Hsieh, Hsinchu, TW;
Yuh-Wen Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.