The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
May. 04, 2004
Jun Gao, Kingston, CA;
Michael J. Sailor, La Jolla, CA (US);
Sangeeta Bhatia, La Jolla, CA (US);
Christopher Flaim, Modesto, CA (US);
Jun Gao, Kingston, CA;
Michael J. Sailor, La Jolla, CA (US);
Sangeeta Bhatia, La Jolla, CA (US);
Christopher Flaim, Modesto, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
The invention is directed to methods for direct patterning of silicon. The invention provides the ability to fabricate complex surfaces in silicon with three dimensional features of high resolution and complex detail. The invention is suitable, for example, for use in soft lithography as embodiments of the invention can quickly create a master for use in soft lithography. In an embodiment of the invention, electrochemical etching of silicon, such as a silicon wafer, for example, is conducted while at least a portion of the silicon surface is exposed to an optical pattern. The etching creates porous silicon in the substrate, and removal of the porous silicon layer leaves a three-dimensional structure correlating to the optical pattern.