The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Sep. 19, 2006
Masayoshi Kosaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Masayoshi Kosaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai, Aichi-ken, JP;
Abstract
A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlGaN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlGaN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlGaN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.