The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Mar. 04, 2005
Tae-kyung Yoo, Yongin-si, KR;
Chang Tae Kim, Seongnam-si, KR;
Eun Hyun Park, Seongnam-si, KR;
Soo Kun Jeon, Gunsan-si, KR;
Tae-Kyung Yoo, Yongin-si, KR;
Chang Tae Kim, Seongnam-si, KR;
Eun Hyun Park, Seongnam-si, KR;
Soo Kun Jeon, Gunsan-si, KR;
Epivalley Co., Ltd., Kyunggi-do, KR;
Abstract
The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiCN(a≧0,b>0,c≧0) layer grown on the p-type III-nitride semiconductor layer, the SiCNlayer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiCNlayer. According to the present invention, a SiCN(a≧0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile