The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2008

Filed:

Mar. 10, 2006
Applicants:

Tetsuya Fujikawa, Kawasaki, JP;

Seiji Doi, Kawasaki, JP;

Inventors:

Tetsuya Fujikawa, Kawasaki, JP;

Seiji Doi, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT substrate comprises a substrate, a gate electrode and a lower electrode of a capacitor formed thereon, a first insulating layer formed thereon, a channel layer above the gate electrode and a lower layer of an upper electrode of the capacitor, a channel protection layer formed on an intermediate part of said channel layer and a capacitor protection layer formed on a connection region of the lower layer, source/drain electrodes formed on said channel layer and an upper layer of the upper electrode of the capacitor formed on the lower layer and covering the capacitor protection layer, a second insulating layer covering them, a first connection hole exposing the source electrode and a second connection hole exposing a connection region of said upper layer, which are penetrating the second insulating layer, and a pixel electrode formed thereon.


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