The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Dec. 20, 2005
Applicants:
Christian G. Van DE Walle, Santa Barbara, CA (US);
Peter Kiesel, Palo Alto, CA (US);
Oliver Schmidt, Palo Alto, CA (US);
Inventors:
Christian G. Van de Walle, Santa Barbara, CA (US);
Peter Kiesel, Palo Alto, CA (US);
Oliver Schmidt, Palo Alto, CA (US);
Assignee:
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.