The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Aug. 15, 2006
Yasuhiro Shimamoto, Leuven, BE;
Shinichi Saito, Kawasaki, JP;
Shimpei Tsujikawa, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or NO atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×10cmor less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×10cmor more.