The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Dec. 30, 2005
Min Dae Hong, Seoul, KR;
Min Dae Hong, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for manufacturing a semiconductor device includes: preparing a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed; forming a first via plug and a first metal line by filling the first via hole and the first trench with a first metal; planarizing the first metal line and the first interlayer insulation layer; forming a second interlayer insulation layer on the first metal line and the first interlayer insulation layer; planarizing the second interlayer insulation layer; forming a second via hole and a second trench in the second interlayer insulation layer; forming a second via plug and a second metal line by filling the second via hole and the second trench with a second metal; and planarizing the second metal line and the second interlayer insulation layer.