The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2008

Filed:

Jul. 21, 2005
Applicant:

Seok-su Kim, Icheon-si, KR;

Inventor:

Seok-Su Kim, Icheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract

An exemplary method for manufacturing a semiconductor device includes: forming an insulating layer over a semiconductor substrate having a gate insulating layer, a gate, and a spacer, respectively formed thereabove and one or more junction regions formed therein so as to fill a full height of a gap between gates; forming a contact hole partially exposing the junction region(s) by etching the insulating layer; and selectively forming a silicon layer on an exposed portion of the junction region at a bottom of the contact hole.


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