The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Mar. 12, 2007
Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline film
Sungkwan Kang, Gyeonggi-do, KR;
Yong-hoon Son, Gyeonggi-do, KR;
Jongwook Lee, Gyeonggi-do, KR;
Yugyun Shin, Gyeonggi-do, KR;
Sungkwan Kang, Gyeonggi-do, KR;
Yong-Hoon Son, Gyeonggi-do, KR;
Jongwook Lee, Gyeonggi-do, KR;
Yugyun Shin, Gyeonggi-do, KR;
Abstract
In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.