The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Sep. 18, 2006
Jin-jun Park, Seoul, KR;
Jin-Jun Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a recessed gate may include forming a gate recess including an upper recess and a lower recess at an upper portion of a semiconductor substrate, the lower recess may have a width substantially wider than that of the upper recess, forming a gate insulation layer on an inner surface of the gate recess, forming a first silicon layer on the semiconductor substrate including the gate insulation layer to form an open void within the gate recess, forming a stop layer having a high thermal resistance on the first silicon layer to prevent a void from moving around within the gate recess, forming a second silicon layer on the first silicon layer, and patterning the second and the first silicon layers to form a gate electrode.