The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Jun. 10, 2003
Jean-michel Reynes, Pompertuzat, FR;
Ivana Deram, Colomiers, FR;
Adeline Feybesse, Blagnac, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A low on-state resistance power semiconductor device has a shape and an arrangement that increase the channel density and the breakdown voltage The power semiconductor device comprises a plurality of individual cells formed on a semiconductor substrate (). Each individual cell comprises a plurality of radially extending branches () having source regions () within base regions (). The plurality of individual cells are arranged such that at least one branch of each cell extends towards at least one branch of an adjacent cell and wherein the base region () of the extending branches merge together to form a single and substantially uniformly doped base region () surrounding drain islands () at the surface of the semiconductor substrate ().