The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Apr. 09, 2003
Walter Spiess, Muenster, DE;
Fumio Kita, Wiesbaden, DE;
Michael Meier, Liederbach, DE;
Andreas Gier, Melle, DE;
Martin Mennig, Quierschied, DE;
Peter W Oliveira, Saarbruecken, DE;
Helmut Schmidt, Saarbruecken-Guedingen, DE;
Walter Spiess, Muenster, DE;
Fumio Kita, Wiesbaden, DE;
Michael Meier, Liederbach, DE;
Andreas Gier, Melle, DE;
Martin Mennig, Quierschied, DE;
Peter W Oliveira, Saarbruecken, DE;
Helmut Schmidt, Saarbruecken-Guedingen, DE;
AZ Electronic Materials (Germany) GmbH, Weisbaden, DE;
Abstract
The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claimis produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF/Oplasma; vii) the bottom coat is plasma etched, preferably with Oplasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.