The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Apr. 26, 2005
Applicant:
Taiji Noda, Osaka, JP;
Inventor:
Taiji Noda, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8236 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MIS-type semiconductor device includes a p-type semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and n-type diffused source and drain layers formed in regions of the semiconductor substrate located below both sides of the gate electrode. Insides of the n-type diffused source and drain layers are formed with p-type impurity implanted regions having a lower p-type impurity concentration than the impurity concentration of the n-type diffused source and drain layer.