The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Jun. 30, 2005
Weon-ho Park, Suwon-si, KR;
Tea-kwang Yu, Suwon-si, KR;
Kyoung-hwan Kim, Hwaseong-si, KR;
Kwang-tae Kim, Suwon-si, KR;
Weon-Ho Park, Suwon-si, KR;
Tea-Kwang Yu, Suwon-si, KR;
Kyoung-Hwan Kim, Hwaseong-si, KR;
Kwang-Tae Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a first insulating layer and a second insulating layer on a substrate, forming a re-flowable material layer pattern to re-flow the re-flowable material layer pattern, removing the second insulating layer and the first insulating layer to expose the substrate, and forming a tunneling insulating layer.