The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Jun. 06, 2005
Pei-ing Lee, Changhua County, TW;
Pei-Ing Lee, Changhua County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method for forming a semiconductor device. A substrate is provided, wherein the substrate has recessed gates and deep trench capacitor devices therein. Protrusions of the recessed gates and upper portions of the deep trench capacitor devices are revealed. Spacers are formed on sidewalls of the upper portions and the protrusions. Buried portions of conductive material are formed in spaces between the spacers. The substrate, the spacers and the buried portions to form parallel shallow trenches are patterned to form parallel shallow trenches for defining active regions. A layer of dielectric material is formed in the shallow trenches, wherein some of the buried portions serve as buried contacts.