The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Feb. 06, 2003
Philippe Renaud, Toulouse, FR;
Frederic Dumestre, Toulouse, FR;
Bruno Chaudret, Vigoulet, FR;
Marie Claire Fromen, Toulouse, FR;
Marie-jose Casanove, Toulouse, FR;
Peter Zurcher, Tempe, AZ (US);
Roland Stumpf, Livermore, CA (US);
Catherine Amiens, Toulouse, FR;
Philippe Renaud, Toulouse, FR;
Frederic Dumestre, Toulouse, FR;
Bruno Chaudret, Vigoulet, FR;
Marie Claire Fromen, Toulouse, FR;
Marie-Jose Casanove, Toulouse, FR;
Peter Zurcher, Tempe, AZ (US);
Roland Stumpf, Livermore, CA (US);
Catherine Amiens, Toulouse, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A magnetic nanoparticle (), a magnetic nanomaterial (), assembly (), and a method for synthsising a magnetic nanoparticle, relating to thermodynamically stable and air stable ferromagnetic nanoparticles of adjustable aspect ratio made upon decomposition of organometallic precursors in solution in the presence of a reaction gas and a mixture of organic ligands. The magnetic nanomaterial comprises magnetic nanoparticles of homogeneous size, shape, and magnetic orientation that comprises a magnetic core () ferromagnetic at room temperature and/or operating temperatures, and a non-magnetic matrix () encapsulating the magnetic core. This magnetic nanomaterial could be used in high frequency integrated circuit applications, such as used in wireless portable electronic devices, to enchance magnetic field confinement and improve passive component performance at MHz and GHz frequency in a variety of passive and active devices, such as transformers, on-chip signal isolation, inductors, and the like.