The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2008
Filed:
May. 13, 2005
John J. O'donnell, Quinn, IE;
Michael Christian Wohnsen Coln, Lexington, MA (US);
Maria Del Mar Chamarro Marti, Valencia, ES;
John J. O'Donnell, Quinn, IE;
Michael Christian Wohnsen Coln, Lexington, MA (US);
Maria del Mar Chamarro Marti, Valencia, ES;
Analog Devices, Inc., Norwood, MA (US);
Abstract
An open drain driver () selectively switches a MOSFET switch (MN) which is passively held in the conducting state into the non-conducting state. The MOSFET switch (MN) switches an AC analogue input signal on a main input terminal () to a main output terminal () and the gate of the MOSFET switch (MN) is AC coupled by a capacitor (C) to the drain thereof. The open drain driver () comprises a first MOSFET (MN) and a second MOSFET (MN) through which the gate of the MOSFET switch (MN) is pulled to ground (V). The gate of the first MOSFET (MN) is coupled to the supply voltage (V) for maintaining the first MOSFET (MN) in the open state. A control signal is applied to the gate of the second MOSFET (MN) for selectively operating the open drain driver () in the conducting state for operating the MOSFET switch (MN) in the non-conducting state. When the second MOSFET (MN) is in the non-conducting state, the first MOSFET (MN) remains in the conducting state until the voltage on a coupling node () between the first and second MOSFETs (MN,MN) equals the difference between its gate voltage and its threshold voltage, at which stage, any over-voltages applied to the gate of the MOSFET switch (MN) are divided between the first and second MOSFETs (MN,MN). A coupling diode (D) coupling the coupling node () to the supply voltage (V) clamps the voltage on the coupling node () at the supply voltage (V) plus the conducting voltage of the diode (D), in the event of the voltage on the coupling node () rising after the first MOSFET (MN) has gone into the non-conducting state. The coupling node () may be capacitively coupled to the supply voltage (V) by a coupling capacitor instead of or as well as the diode (D) for limiting the voltage on the coupling node ().