The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2008
Filed:
Aug. 07, 2006
Applicants:
Majid M. Mansoori, Dallas, TX (US);
Christoph A. Wasshuber, Cambridge, MA (US);
Inventors:
Majid M. Mansoori, Dallas, TX (US);
Christoph A. Wasshuber, Cambridge, MA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides source/drain electrodefor a transistor. The source/drain electrodecomprises a plurality of polysilicon grainslocated over a source/drain region. A metal salicide layerconformally coats the plurality of polysilicon grains. The present invention also includes a method of fabricating the above described source/drain electrode, and integrated circuithave includes a semiconductor devicehaving the described source/drain electrodes