The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7427533 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 23, 2008

Filed:

May. 30, 2006
Applicants:

Wook-hyoung Lee, Gyeonggi-do, KR;

Jae-hoon Kim, Gyeonggi-do, KR;

Inventors:

Wook-Hyoung Lee, Gyeonggi-do, KR;

Jae-Hoon Kim, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device includes forming an active region including opposing sidewalls and a surface therebetween protruding from a substrate. A protective insulating layer is formed on the sidewalls of the active region, and extends away from the substrate to beyond the surface of the active region. A device isolation layer is also formed on the opposing sidewalls of the active region, and extends along the protective insulating layer to beyond the surface of the active region. As such, the protective insulating layer may protect portions of the device isolation layer extending therealong during subsequent fabrication processes. Related devices are also discussed.


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