The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Oct. 10, 2006
Jae-hyoung Choi, Hwaseong-si, KR;
Sung-ho Kang, Hwaseong-si, KR;
Jung-hee Chung, Suwon-si, KR;
Seog-min Lee, Suwon-si, KR;
Jong-bom Seo, Yongin-si, KR;
Young-min Kim, Yongin-si, KR;
Jae-hyoung Choi, Hwaseong-si, KR;
Sung-ho Kang, Hwaseong-si, KR;
Jung-hee Chung, Suwon-si, KR;
Seog-min Lee, Suwon-si, KR;
Jong-bom Seo, Yongin-si, KR;
Young-min Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of time, respectively, in an initial cycle, sequentially supplying and purging the first and the second precursor materials for a third predetermined amount of time, which is shorter than the first and/or second predetermined amount of time, in a post cycle, which follows the initial cycle, and repeating the initial and post cycles to form a dielectric layer having a predetermined thickness.