The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Feb. 17, 2005
Kyoung-ryul Yoon, Goyang-si, KR;
Han-mei Choi, Seoul, KR;
Seung-hwan Lee, Seoul, KR;
Dae-sik Choi, Seoul, KR;
Ki-yeon Park, Seoul, KR;
Young-sun Kim, Suwon-si, KR;
Sung-tae Kim, Seoul, KR;
Cha-young You, Suwon-si, KR;
Kyoung-Ryul Yoon, Goyang-si, KR;
Han-Mei Choi, Seoul, KR;
Seung-Hwan Lee, Seoul, KR;
Dae-Sik Choi, Seoul, KR;
Ki-Yeon Park, Seoul, KR;
Young-Sun Kim, Suwon-si, KR;
Sung-Tae Kim, Seoul, KR;
Cha-Young You, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.