The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Dec. 16, 2005
Chia-nan Shen, Taipei County, TW;
Wen-chun Yeh, Taoyuan County, TW;
Chia-chien Chen, Taipei, TW;
Bing-wei Wu, Taoyuan County, TW;
Hung-chi Liao, Taipei County, TW;
Chia-Nan Shen, Taipei County, TW;
Wen-Chun Yeh, Taoyuan County, TW;
Chia-Chien Chen, Taipei, TW;
Bing-Wei Wu, Taoyuan County, TW;
Hung-Chi Liao, Taipei County, TW;
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Abstract
A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.