The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2008
Filed:
Feb. 18, 2005
Applicants:
Takeo Kawase, Suwa, JP;
Satoshi Kimura, Fujumi-cho, JP;
Hidemichi Furihata, Chino, JP;
Mitsuaki Harada, Chino, JP;
Inventors:
Takeo Kawase, Suwa, JP;
Satoshi Kimura, Fujumi-cho, JP;
Hidemichi Furihata, Chino, JP;
Mitsuaki Harada, Chino, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a transistor includes the step of forming on a substrate a source electrode and drain electrode by selective electroless plating after patterning a charge control agent attached to the substrate using light, and the step of forming an organic semiconductor, a gate insulation layer, and a gate electrode.